IndiumV3, Main, Repository, bibRecord, 007580

Magnetism due to oxygen vacancies and/or defects in undoped semiconducting and insulating oxide thin films

Identifieur interne : 007580 ( Main/Repository ); précédent : 007579; suivant : 007581

Magnetism due to oxygen vacancies and/or defects in undoped semiconducting and insulating oxide thin films

Auteurs : RBID : Pascal:07-0359181

Descripteurs français

Pascal (Inist)
- Aimantation, Lacune, Défaut, Ferromagnétisme, Moment magnétique, Effet champ magnétique, Matériau ferromagnétique, Semiconducteur, Couche mince, Hafnium oxyde, Titane oxyde, Indium oxyde, HfO2, TiO2, In2O3, 7570A.

English descriptors

KwdEn :
- Defects, Ferromagnetic materials, Ferromagnetism, Hafnium oxides, Indium oxides, Magnetic field effects, Magnetic moments, Magnetization, Semiconductor materials, Thin films, Titanium oxides, Vacancies.

Abstract

Room temperature ferromagnetism was observed in HfO₂, TiO₂, and In₂O₃ films grown on yttrium-stabilized zirconia, LaAlO₃, and MgO substrates, respectively. While the magnetic moment is rather modest in the case of In₂O₃ films, it is very large in the other two cases. Thin film form, which might create necessary defects and/or oxygen vacancies, must be the main reason for undoped semiconducting and insulating oxides to become ferromagnetic. From the results, a serious question arises if a transition-metal doping indeed plays any essential role in producing ferromagnetism (FM) in non-magnetic oxides.

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Pascal:07-0359181

Le document en format XML

<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Magnetism due to oxygen vacancies and/or defects in undoped semiconducting and insulating oxide thin films</title>
<author><name>NGUYEN HOA HONG</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire LEMA, UMR 6157 CNRS/CEA, Université F. Rabelais, Parc de Grandmont</s1>
<s2>37200 Tours</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Région Centre</region>
<settlement type="city">Tours</settlement>
</placeName>
</affiliation>
</author>
<author><name sortKey="Sakai, Joe" uniqKey="Sakai J">Joe Sakai</name>
<affiliation wicri:level="1"><inist:fA14 i1="02"><s1>School of Materials Science, JAIST, Asahidai 1-1, Tatsunikuchi</s1>
<s2>Nomi, Ishikawa 923-1292</s2>
<s3>JPN</s3>
<sZ>2 aut.</sZ>
</inist:fA14>
<country>Japon</country>
<wicri:noRegion>Nomi, Ishikawa 923-1292</wicri:noRegion>
</affiliation>
</author>
<author><name sortKey="Gervais, Francois" uniqKey="Gervais F">Francois Gervais</name>
<affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Laboratoire LEMA, UMR 6157 CNRS/CEA, Université F. Rabelais, Parc de Grandmont</s1>
<s2>37200 Tours</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
</inist:fA14>
<country>France</country>
<placeName><region type="region" nuts="2">Région Centre</region>
<settlement type="city">Tours</settlement>
</placeName>
</affiliation>
</author>
</titleStmt>
<publicationStmt><idno type="inist">07-0359181</idno>
<date when="2007">2007</date>
<idno type="stanalyst">PASCAL 07-0359181 INIST</idno>
<idno type="RBID">Pascal:07-0359181</idno>
<idno type="wicri:Area/Main/Corpus">007749</idno>
<idno type="wicri:Area/Main/Repository">007580</idno>
</publicationStmt>
<seriesStmt><idno type="ISSN">0304-8853</idno>
<title level="j" type="abbreviated">J. magn. magn. mater.</title>
<title level="j" type="main">Journal of magnetism and magnetic materials</title>
</seriesStmt>
</fileDesc>
<profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Defects</term>
<term>Ferromagnetic materials</term>
<term>Ferromagnetism</term>
<term>Hafnium oxides</term>
<term>Indium oxides</term>
<term>Magnetic field effects</term>
<term>Magnetic moments</term>
<term>Magnetization</term>
<term>Semiconductor materials</term>
<term>Thin films</term>
<term>Titanium oxides</term>
<term>Vacancies</term>
</keywords>
<keywords scheme="Pascal" xml:lang="fr"><term>Aimantation</term>
<term>Lacune</term>
<term>Défaut</term>
<term>Ferromagnétisme</term>
<term>Moment magnétique</term>
<term>Effet champ magnétique</term>
<term>Matériau ferromagnétique</term>
<term>Semiconducteur</term>
<term>Couche mince</term>
<term>Hafnium oxyde</term>
<term>Titane oxyde</term>
<term>Indium oxyde</term>
<term>HfO2</term>
<term>TiO2</term>
<term>In2O3</term>
<term>7570A</term>
</keywords>
</textClass>
</profileDesc>
</teiHeader>
<front><div type="abstract" xml:lang="en">Room temperature ferromagnetism was observed in HfO<sub>2</sub>
, TiO<sub>2</sub>
, and In<sub>2</sub>
O<sub>3</sub>
 films grown on yttrium-stabilized zirconia, LaAlO<sub>3</sub>
, and MgO substrates, respectively. While the magnetic moment is rather modest in the case of In<sub>2</sub>
O<sub>3</sub>
 films, it is very large in the other two cases. Thin film form, which might create necessary defects and/or oxygen vacancies, must be the main reason for undoped semiconducting and insulating oxides to become ferromagnetic. From the results, a serious question arises if a transition-metal doping indeed plays any essential role in producing ferromagnetism (FM) in non-magnetic oxides.</div>
</front>
</TEI>
<inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0304-8853</s0>
</fA01>
<fA02 i1="01"><s0>JMMMDC</s0>
</fA02>
<fA03 i2="1"><s0>J. magn. magn. mater.</s0>
</fA03>
<fA05><s2>316</s2>
</fA05>
<fA06><s2>2</s2>
</fA06>
<fA08 i1="01" i2="1" l="ENG"><s1>Magnetism due to oxygen vacancies and/or defects in undoped semiconducting and insulating oxide thin films</s1>
</fA08>
<fA09 i1="01" i2="1" l="ENG"><s1>Proceedings of the Joint European Magnetic Symposia (JEMS'06), San Sebastian, 26-30 June 2006</s1>
</fA09>
<fA11 i1="01" i2="1"><s1>NGUYEN HOA HONG</s1>
</fA11>
<fA11 i1="02" i2="1"><s1>SAKAI (Joe)</s1>
</fA11>
<fA11 i1="03" i2="1"><s1>GERVAIS (Francois)</s1>
</fA11>
<fA12 i1="01" i2="1"><s1>PANINA (Larissa)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="02" i2="1"><s1>ZHUKOV (A.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="03" i2="1"><s1>GONZALEZ (Julián)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="04" i2="1"><s1>FASSBENDER (J.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="05" i2="1"><s1>THOMPSON (S.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="06" i2="1"><s1>SCHREFL (T.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="07" i2="1"><s1>VARGA (R.)</s1>
<s9>ed.</s9>
</fA12>
<fA12 i1="08" i2="1"><s1>BERTOTTI (G.)</s1>
<s9>ed.</s9>
</fA12>
<fA14 i1="01"><s1>Laboratoire LEMA, UMR 6157 CNRS/CEA, Université F. Rabelais, Parc de Grandmont</s1>
<s2>37200 Tours</s2>
<s3>FRA</s3>
<sZ>1 aut.</sZ>
<sZ>3 aut.</sZ>
</fA14>
<fA14 i1="02"><s1>School of Materials Science, JAIST, Asahidai 1-1, Tatsunikuchi</s1>
<s2>Nomi, Ishikawa 923-1292</s2>
<s3>JPN</s3>
<sZ>2 aut.</sZ>
</fA14>
<fA15 i1="01"><s1>Department of Communication and Electrical Engineering, University of Plymouth, Drake Circus</s1>
<s2>Plymouth, Devon PL4 8AA</s2>
<s3>GBR</s3>
<sZ>1 aut.</sZ>
</fA15>
<fA15 i1="02"><s1>University of the Basque Country</s1>
<s2>San Sebastián</s2>
<s3>ESP</s3>
<sZ>2 aut.</sZ>
<sZ>3 aut.</sZ>
</fA15>
<fA20><s1>214-217</s1>
</fA20>
<fA21><s1>2007</s1>
</fA21>
<fA23 i1="01"><s0>ENG</s0>
</fA23>
<fA43 i1="01"><s1>INIST</s1>
<s2>17230</s2>
<s5>354000146565330300</s5>
</fA43>
<fA44><s0>0000</s0>
<s1>© 2007 INIST-CNRS. All rights reserved.</s1>
</fA44>
<fA45><s0>14 ref.</s0>
</fA45>
<fA47 i1="01" i2="1"><s0>07-0359181</s0>
</fA47>
<fA60><s1>P</s1>
<s2>C</s2>
</fA60>
<fA61><s0>A</s0>
</fA61>
<fA64 i1="01" i2="1"><s0>Journal of magnetism and magnetic materials</s0>
</fA64>
<fA66 i1="01"><s0>NLD</s0>
</fA66>
<fC01 i1="01" l="ENG"><s0>Room temperature ferromagnetism was observed in HfO<sub>2</sub>
, TiO<sub>2</sub>
, and In<sub>2</sub>
O<sub>3</sub>
 films grown on yttrium-stabilized zirconia, LaAlO<sub>3</sub>
, and MgO substrates, respectively. While the magnetic moment is rather modest in the case of In<sub>2</sub>
O<sub>3</sub>
 films, it is very large in the other two cases. Thin film form, which might create necessary defects and/or oxygen vacancies, must be the main reason for undoped semiconducting and insulating oxides to become ferromagnetic. From the results, a serious question arises if a transition-metal doping indeed plays any essential role in producing ferromagnetism (FM) in non-magnetic oxides.</s0>
</fC01>
<fC02 i1="01" i2="3"><s0>001B70E70A</s0>
</fC02>
<fC03 i1="01" i2="3" l="FRE"><s0>Aimantation</s0>
<s5>02</s5>
</fC03>
<fC03 i1="01" i2="3" l="ENG"><s0>Magnetization</s0>
<s5>02</s5>
</fC03>
<fC03 i1="02" i2="3" l="FRE"><s0>Lacune</s0>
<s5>03</s5>
</fC03>
<fC03 i1="02" i2="3" l="ENG"><s0>Vacancies</s0>
<s5>03</s5>
</fC03>
<fC03 i1="03" i2="3" l="FRE"><s0>Défaut</s0>
<s5>04</s5>
</fC03>
<fC03 i1="03" i2="3" l="ENG"><s0>Defects</s0>
<s5>04</s5>
</fC03>
<fC03 i1="04" i2="3" l="FRE"><s0>Ferromagnétisme</s0>
<s5>05</s5>
</fC03>
<fC03 i1="04" i2="3" l="ENG"><s0>Ferromagnetism</s0>
<s5>05</s5>
</fC03>
<fC03 i1="05" i2="3" l="FRE"><s0>Moment magnétique</s0>
<s5>06</s5>
</fC03>
<fC03 i1="05" i2="3" l="ENG"><s0>Magnetic moments</s0>
<s5>06</s5>
</fC03>
<fC03 i1="06" i2="3" l="FRE"><s0>Effet champ magnétique</s0>
<s5>07</s5>
</fC03>
<fC03 i1="06" i2="3" l="ENG"><s0>Magnetic field effects</s0>
<s5>07</s5>
</fC03>
<fC03 i1="07" i2="3" l="FRE"><s0>Matériau ferromagnétique</s0>
<s5>14</s5>
</fC03>
<fC03 i1="07" i2="3" l="ENG"><s0>Ferromagnetic materials</s0>
<s5>14</s5>
</fC03>
<fC03 i1="08" i2="3" l="FRE"><s0>Semiconducteur</s0>
<s5>15</s5>
</fC03>
<fC03 i1="08" i2="3" l="ENG"><s0>Semiconductor materials</s0>
<s5>15</s5>
</fC03>
<fC03 i1="09" i2="3" l="FRE"><s0>Couche mince</s0>
<s5>16</s5>
</fC03>
<fC03 i1="09" i2="3" l="ENG"><s0>Thin films</s0>
<s5>16</s5>
</fC03>
<fC03 i1="10" i2="3" l="FRE"><s0>Hafnium oxyde</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="10" i2="3" l="ENG"><s0>Hafnium oxides</s0>
<s2>NK</s2>
<s5>17</s5>
</fC03>
<fC03 i1="11" i2="3" l="FRE"><s0>Titane oxyde</s0>
<s2>NK</s2>
<s5>18</s5>
</fC03>
<fC03 i1="11" i2="3" l="ENG"><s0>Titanium oxides</s0>
<s2>NK</s2>
<s5>18</s5>
</fC03>
<fC03 i1="12" i2="3" l="FRE"><s0>Indium oxyde</s0>
<s2>NK</s2>
<s5>19</s5>
</fC03>
<fC03 i1="12" i2="3" l="ENG"><s0>Indium oxides</s0>
<s2>NK</s2>
<s5>19</s5>
</fC03>
<fC03 i1="13" i2="3" l="FRE"><s0>HfO2</s0>
<s4>INC</s4>
<s5>52</s5>
</fC03>
<fC03 i1="14" i2="3" l="FRE"><s0>TiO2</s0>
<s4>INC</s4>
<s5>53</s5>
</fC03>
<fC03 i1="15" i2="3" l="FRE"><s0>In2O3</s0>
<s4>INC</s4>
<s5>54</s5>
</fC03>
<fC03 i1="16" i2="3" l="FRE"><s0>7570A</s0>
<s4>INC</s4>
<s5>60</s5>
</fC03>
<fN21><s1>232</s1>
</fN21>
</pA>
<pR><fA30 i1="01" i2="1" l="ENG"><s1>JEMS'06 : Joint European Magnetic Symposia</s1>
<s2>3</s2>
<s3>San Sebastian ESP</s3>
<s4>2006-06-26</s4>
</fA30>
</pR>
</standard>
</inist>
</record>

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Magnetism due to oxygen vacancies and/or defects in undoped semiconducting and insulating oxide thin films

Magnetism due to oxygen vacancies and/or defects in undoped semiconducting and insulating oxide thin films

Descripteurs français

English descriptors

Abstract

Links toward previous steps (curation, corpus...)

Links to Exploration step

Le document en format XML

Pour manipuler ce document sous Unix (Dilib)

Pour mettre un lien sur cette page dans le réseau Wicri